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| Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm 0.70.1 s Features q q q q 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 4.20.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 130 80 7 20 10 30 2 150 -55 to +150 Unit V V V A A W C C Solder Dip Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 4.0 s Absolute Maximum Ratings 16.70.3 7.50.2 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 6A IC = 6A, IB = 0.3A IC = 10A, IB = 1A IC = 6A, IB = 0.3A IC = 10A, IB = 1A VCE = 10V, IC = 0.5A, f = 1MHz IC = 6A, IB1 = 0.6A, IB2 = - 0.6A, VCC = 50V 20 0.5 2.0 0.2 80 45 90 30 0.5 1.5 1.5 2.5 V V V V MHz s s s 260 min typ max 10 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 40 20 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2W) (1) TC=25C IB=400mA 2SD2151 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 30 Collector current IC (A) 16 3 12 250mA 200mA 160mA 120mA 100mA 80mA 60mA 40mA 20mA 1 TC=100C 0.3 25C 0.1 -25C 20 8 10 (2) 4 0.03 (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC 1000 IC/IB=10 1000 VCE=2V fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C 300 TC=100C 100 25C -25C 30 Transition frequency fT (MHz) 1 3 10 30 30 Forward current transfer ratio hFE 300 100 30 10 3 1 0.3 0.1 0.01 0.03 10 3 0.1 0.3 1 3 10 1 0.1 0.3 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C tstg Area of safe operation (ASO) 100 30 ICP IC 10ms Non repetitive pulse TC=25C t=1ms Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 ton tf 10 3 1 0.3 0.1 0.03 0.01 DC 5 6 7 8 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD2151 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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